安世LFPAK56D双通道MOSFET：小封装、大能量的功率器件新标杆

安世LFPAK56D双通道MOSFET：小封装、大能量的功率器件新标杆

5*6mm尺寸内装下2个功率MOSFET，对汽车电子控制器来说，减少尺寸，优化面积非常有好处。市场上安世的LFPAK56D产品广泛应用于车身域控制器BDU BCM/区域控制器ZCU，在现代efuse/座椅控制/天窗控制中等功率应用中非常广泛，还有底盘EPB电子驻车应用中也广泛存在。

General description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications

 Features and benefits

•Dual MOSFET

• Q101 compliant

• Repetitive avalanche rated

• Suitable for thermally demanding environments due to 175 °C rating

• True standard level gate with VGS(th) of greater than 1 V at 175 °C

Applications

• 12 V Automotive systems

• Motors, lamps and solenoid control

• Transmission control

• Ultra high performance power switching